Semiconductor Materials Seminar

14.10 - 15.00

As the demand for electronic devices increases, coupled with the slowing of Moore’s law, new materials, processes and device integration technology are needed to support growing consumer demands. In this presentation, we will introduce the key feature of the ZEISS Gemini FE-SEM column that enables high-resolution imaging and analytics from high to ultra-low kV. Some of the imaging and analytics that will be introduced include STEM-in-SEM, ECCI, low kV EDX, ultra-low kV imaging of beam-sensitive materials, nanoprobing and AFM-In-SEM for local electrical measurements of a device. The correlative microscopy workflow that connects Light Microscope to Electron Microscope for easy navigation of region-of-interest (ROI) between microscopes for correlative imaging, data analysis and presentation will be presented.

15.00 - 15.50

Due to the increased complexity and reduced interconnect dimensions in semiconductor packages, non-destructive and high-resolution 3D imaging is highly desirable for semiconductor materials research. This presentation will introduce the Resolution at a Distance (RaaD) technology on the ZEISS Xradia Versa X-ray Microscope (XRM). Learn how the architecture of the XRM enables high-resolution imaging on large-format semiconductor devices. To facilitate high-resolution and high-throughput 3D image processing, take advantage of the Advanced Reconstruction Toolbox, ART 3.0, with AI-driven analytics that improves image quality and processing throughput. The XRM also enables advanced analytics such as in-situ studies and non-destructive crystallography analysis based on diffraction mode. Lastly, the ZEISS Sample-in-Volume-Analysis correlative microscopy workflow that enables the determination of subsurface region-of-interest using XRM followed by massive material removal with LaserFIB and fine polishing of site-specific samples (e.g., TEM lamellar & APT needles) for subsequent microanalysis will be presented.

16.20 - 17.10

With increasing electronic device density due to the need for a powerful, high-performance, compact device, subsurface assembly and material analysis becomes even more critical. The innovative ZEISS Crossbeam FIB-SEM that combines focused ion beam (FIB) and scanning electron microscopy (SEM) with an integrated fs laser chamber enable precise subsurface sample cross-sectioning, milling and ablation. This presentation will provide semiconductor research examples that benefitted from the low kV field-free SEM column, dedicated fs laser chamber for large material ablation, low kV Ga+ ion sample polishing, and correlative microscopy workflow. The ZEISS Sample-in-Volume-Analysis correlative microscopy workflow that enables precise determination of subsurface region-of-interest followed by large material removal and fine polishing of site-specific samples (e.g., TEM lamellar & APT needles) for subsequent microanalysis within a semiconductor assembly sample will be presented.